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2SD1803-X-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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2SD1803-X-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() 2SD1803 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R209-014,E ABSOLUATE MAXIUM RATINGS (T A = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V DC IC 5 Collector Current PULSE ICM 8 A TA=25°C 1 Power Dissipation TC=25°C PD 20 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A= 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, RBE=∞ 50 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V Collector Cutoff Current ICBO VCB=40V, IE=0 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0 1 μA hFE1 VCE=2V, IC=0.5A 70 400 DC Current Gain hFE2 VCE=2V, IC=4A 35 C-E Saturation Voltage VCE(SAT) IC=3A, IB=0.15A 220 400 mV B-E Saturation Voltage VBE(SAT) IC=3A, IB=0.15A 0.95 1.3 V Gain-Bandwidth Product fT VCE=5V, Ic=1A 180 MHz Output Capacitance Cob VCB=10V, f=1MHz 40 pF Turn-on Time tON See Test Circuit 50 ns Storage Time tS See Test Circuit 500 ns Fall Time tF See Test Circuit 20 ns CLASSIFICATION OF hFE1 RANK Q R S T RANGE 70 ~ 140 100 ~ 200 140 ~ 280 200 ~ 400 |
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