2SD1616/A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-008.D

PARAMETER

SYMBOL

RATINGS

UNIT

2SD1616

60

Collector to Base Voltage

2SD1616A

120

V

2SD1616

50

Collector to Emitter Voltage

2SD1616A

60

V

Emitter to Base Voltage

6

V

DC

1

A

Collector Current

Pulse(Note2)

2

A

Total Power Dissipation

750

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width

≤10ms, Duty cycle<50%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Saturation Voltage

0.15

0.3

V

Base-Emitter Saturation Voltage

0.9

1.2

V

Base Emitter On Voltage

600

640

700

mV

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

2SD1616

135

600

2SD1616A

135

400

DC Current Gain

81

Transition Frequency

100

160

MHz

Output Capacitance

19

pF

Turn On Time

0.07

μs

Storage Time

0.95

μs

Fall Time

0.07

μs

RANK

Y

G

L

135 ~ 270

200 ~ 400

300 ~ 600