3LN01M

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-285.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±10

V

DC

0.15

Drain Current

Pulse(Note 2)

0.6

A

Power Dissipation

0.15

W

Storage Temperature

-55 ~ +150

℃

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≦10μs, Duty cycle≦1%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Cutoff Threshold Voltage

0.4

1.3

V

2.9

3.7

3.7

5.2

Static Drain-Source On-Resistance

6.4

12.8

Ω

Forward Transconductance

0.15

0.22

S

DYNAMIC PARAMETERS

Input Capacitance

7.0

pF

Output Capacitance

5.9

pF

Reverse Transfer Capacitance

2.3

pF

SWITCHING PARAMETERS

Total Gate Charge

1.58

nC

Gate Source Charge

0.26

nC

Gate Drain Charge

0.31

nC

Turn-ON Delay Time

19

ns

Turn-ON Rise Time

65

ns

Turn-OFF Delay Time

155

ns

Turn-OFF Fall-Time

See specified Test Circuit

120

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.87

1.2

V