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3N70L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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3N70L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() 3N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-282,D ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A Reverse Recovery Time tRR 210 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/μs (Note 1) 1.2 µC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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