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3N70G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 3N70G-TN3-R
功能描述  3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

3N70G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  3N70G-TN3-R Datasheet HTML 1Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 2Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 3Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 4Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 5Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 6Page - Unisonic Technologies 3N70G-TN3-R Datasheet HTML 7Page - Unisonic Technologies  
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3N70
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 7
www.unisonic.com.tw
QW-R502-282,D
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
Single Pulsed (Note 3)
EAS
200
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
10
μA
Forward
VGS = 30 V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 1.5A
2.8
4.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
350 450
pF
Output Capacitance
COSS
50
65
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
5.5
32
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
40
ns
Turn-On Rise Time
tR
30
70
ns
Turn-Off Delay Time
tD(OFF)
20
100
ns
Turn-Off Fall Time
tF
VDD = 30V, ID = 1.0 A, RG = 25Ω
(Note 1, 2)
30
70
ns
Total Gate Charge
QG
10
13
nC
Gate-Source Charge
QGS
2.7
nC
Gate-Drain Charge
QDD
VDS= 480V,ID= 3.0A, VGS= 10 V
(Note 1, 2)
4.9
nC



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