3N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-110,F

PARAMETER

SYMBOL

RATINGS

UNIT

3N60-A

600

V

Drain-Source Voltage

3N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

3.0

A

Continuous Drain Current

3.0

A

Pulsed Drain Current (Note 1)

12

A

Single Pulsed (Note 2)

200

mJ

Avalanche Energy

Repetitive (Note 1)

7.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220

75

TO-220F/TO-220F1

34

Power Dissipation

TO-251/TO-252

50

W

Junction Temperature

+150

℃

Operating Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220

62.5

TO-220F/TO-220F1

62.5

Junction-to-Ambient

TO-251/TO-252

110

°C/W

TO-220

1.67

TO-220F/TO-220F1

3.68

Junction-to-Case

TO-251/TO-252

2.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

3N60-A

600

V

Drain-Source Breakdown Voltage

3N60-B

650

V

Drain-Source Leakage Current

10

μA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.6

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

2.8

3.6

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

350 450

pF

Output Capacitance

50

65

pF

Reverse Transfer Capacitance

5.5

7.5

pF