UNISONIC TECHNOLOGIES CO., LTD

4N60

Power MOSFET

www.unisonic.com.tw

1 of 8

Copyright © 2010 Unisonic Technologies Co., Ltd

QW-R502-061, N

4 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 4N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

FEATURES

* Ultra Low Gate Charge ( typical 15 nC )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

TO-251

1

1

TO-252

TO-220

1

1

TO-220F

1

TO-220F1

TO-262

1

TO-263

1

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

4N60L-x-TA3-T

4N60G-x-TA3-T

TO-220

G

D

S

Tube

4N60L-x-TF1-T

4N60G-x-TF1-T

TO-220F1

G

D

S

Tube

4N60L-x-TF3-T

4N60G-x-TF3-T

TO-220F

G

D

S

Tube

4N60L-x-TM3-T

4N60G-x-TM3-T

TO-251

G

D

S

Tube

4N60L-x-TN3-R

4N60G-x-TN3-R

TO-252

G

D

S

Tape Reel

4N60L-x-T2Q-T

4N60G-x-T2Q-T

TO-262

G

D

S

Tube

4N60L-x-TQ3-R

4N60G-x-TQ3-R

TO-263

G

D

S

Tape Reel

4N60L-x-TQ3-T

4N60G-x-TQ3-T

TO-263

G

D

S

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source