6N10G-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

6N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-486.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

VDS=80V, VGS=0V

VDS=80V, VGS=0V, TJ=125°C

Drain-Source Leakage Current

IDSS

VDS=80V, VGS=0V, TJ=175°C

250

µA

Forward

VGS=+20V, VDS=0V

+100

Gate- Source Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100

On-State Drain Current (Note 2)

ID(on)

VDS=5V, VGS=10V

8.0

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.0

3.0

VGS=10V, ID=3A

0.160 0.200

VGS=10V, ID=3A, TJ=125°C

0.350

VGS=10V, ID=3A, TJ=175°C

0.450

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=4.5, ID=1.0A

0.180 0.225

Ω

Forward Transconductance (Note 2)

gFS

VDS=15V, ID=3A

8.5

DYNAMIC PARAMETERS

(Note1)

Input Capacitance

CISS

240

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

2.7

4.0

Gate to Source Charge (Note 3)

QGS

0.6

Gate to Drain Charge (Note 3)

QGD

VDS=50V, VGS=5V, ID=6.5A

0.7

Turn-ON Delay Time (Note3)

tD(ON)

Rise Time (Note 3)

Turn-OFF Delay Time (Note 3)

tD(OFF)

Fall-Time (Note 3)

VDD=50V, RL=7.5Ω, ID≈6.5A,

VGEN=10V, RG=2.5 Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

(TC=25°C)

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

8.0

Drain-Source Diode Forward Voltage (Note 2)

VSD

IF=6.5A, VGS=0V

0.9

1.3

Reverse Recovery Time

tRR

IF=6.5A, di/dt=100A/µs

Notes: 1. Guaranteed by design, not subject to production testing.

2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.

3. Independent of operating temperature.

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