5N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-065,F

PARAMETER

SYMBOL

RATINGS

UNIT

5N60-A

600

Drain-Source Voltage

5N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

4.5

A

Continuous Drain Current

4.5

A

Pulsed Drain Current (Note 2)

18

A

Single Pulsed (Note 3)

210

Avalanche Energy

Repetitive (Note 2)

10

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

100

TO-220F/TO-220F1

36

W

Power Dissipation

TO-251 / TO-252

54

Junction Temperature

+150

°C

Operation Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F/TO-220F1

62.5

Junction-to-Ambient

TO-251 / TO-252

160

°C/W

TO-220

1.25

TO-220F/TO-220F1

3.47

Junction-to-Case

TO-251 / TO-252

2.3

°C/W