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7N10G-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 7N10G-AA3-R
功能描述  7 Amps, 100 Volts N-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

7N10G-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies

  7N10G-AA3-R Datasheet HTML 1Page - Unisonic Technologies 7N10G-AA3-R Datasheet HTML 2Page - Unisonic Technologies 7N10G-AA3-R Datasheet HTML 3Page - Unisonic Technologies 7N10G-AA3-R Datasheet HTML 4Page - Unisonic Technologies 7N10G-AA3-R Datasheet HTML 5Page - Unisonic Technologies 7N10G-AA3-R Datasheet HTML 6Page - Unisonic Technologies  
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7N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-394.d
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±25
V
TC =25°C
ID
7
A
Continuous Drain
Current
TC = 70°C
ID
6.8
A
Pulsed Drain Current (Note 2)
IDM
16
A
Avalanche Current (Note 2)
IAR
7
A
Repetitive Avalanche Energy (Note 2)
EAR
0.2
mJ
Single Pulsed Avalanche Energy (Note 3)
EAS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.0
V/ns
SOT-223
2.0
TC =25°C
TO-252
2.5
W
SOT-223
0.016
Power Dissipation
Derate above 25°C
TO-252
PD
0.02
W/°C
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repetitive Rating : Pulse width limited by maximum junction temperature
L =26mH, IAS =1.7A, VDD =25V, RG =25Ω Starting TJ =25°C
ISD ≤7.3A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-223
62.5
Junction to Ambient
TO-252
θJA
50
°C/W
Note: When mounted on the minimum pad size recommended (PCB Mount)
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
100
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ Reference to 25°C ,ID =250µA
0.1
V/°C
VDS =100V, VGS =0V
1
µA
Drain-Source Leakage Current
IDSS
VDS =80V, TC =125°C
10
µA
Gate-Source Leakage Current
IGSS
VGS =±25V, VDS =0V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V, ID =3.5A
0.28
0.35
Ω
Forward Transconductance
gFS
VDS =40V, ID =0.85A(Note 1)
1.85
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
190
250
pF
Output Capacitance
COSS
60
75
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS=0V, f=1.0MHz
10
13
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
5.8
7.5
nC
Gate Source Charge
QGS
1.4
nC
Gate Drain Charge
QGD
VGS=10V, VDS=80V, ID=7.3A
(Note 1,2)
2.5
nC
Turn-ON Delay Time
tD(ON)
7
25
ns
Turn-ON Rise Time
tR
24
60
ns
Turn-OFF Delay Time
tD(OFF)
13
35
ns
Turn-OFF Fall-Time
tF
VDD=50V, ID=7.3A, RG=25Ω
(Note 1,2)
19
50
ns



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