7N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-104.Ba

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

7.4

A

Continuous

7.4

A

Drain Current

Pulsed (Note 2)

29.6

A

Single Pulsed (Note 3)

530

mJ

Avalanche Energy

Repetitive (Note 2)

14.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

142

W

Power Dissipation

TO-220F/TO-220F1

48

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-262/TO-263

62.5

°C/W

Junction to Ambient

TO-220F/TO-220F1

62.5

°C/W

TO-220/TO-262/TO-263

0.88

°C/W

Junction to Case

TO-220F/TO-220F1

2.6

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

1

μA

Forward

100

nA

Gate- Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

△

Referenced to 25°C

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

1.2

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

1400

pF

Output Capacitance

180

pF

Reverse Transfer Capacitance

16

21

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

70

ns

Turn-On Rise Time

170

ns

Turn-Off Delay Time

140

ns

Turn-Off Fall Time

(Note 1, 2)

130

ns

SWITCHING CHARACTERISTICS

Total Gate Charge

29

38

nC

Gate-Source Charge

7

nC

Gate-Drain Charge

(Note 1, 2)

14.5

nC