7P20G-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

7P20

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-288.B

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-200

Gate-Source Voltage

VGSS

±30

Continuous Drain Current

-5.7

Pulsed Drain Current (Note 2)

IDM

-22.8

Avalanche Current (Note 2)

IAR

-5.7

Single Pulsed Avalanche Energy (Note 3)

EAS

570

Repetitive Avalanche Energy (Note 2)

EAR

5.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.5

V/ns

Ta = 25°C

2.5

Power Dissipation

TC = 25°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by TJ(MAX)

L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω

ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

100

°C /W

Junction to Case

θJC

2.27

°C /W

ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0 V, ID=-250 µA

-200

Breakdown Voltage Temperature

Coefficient

ΔBVDSS/ΔTJ

ID=-250µA,

Referenced to25°C

-0.1

V/°C

Drain-Source Leakage Current

IDSS

VDS=-200V, VGS=0V

-1

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±30V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-2.85A

0.54

0.69

Ω

Forward Transconductance

gFS

VDS=-40V, ID=-2.85A (Note 1)

3.7

DYNAMIC PARAMETERS

Input Capacitance

CISS

590

770

Output Capacitance

COSS

140

180

Reverse Transfer Capacitance

CRSS

VDS=-25V, VGS=0V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

QGS

4.6

Gate Drain Charge

QGD

VDS=-160V, VGS=-10V,

ID=-7.3A (Note 1, 2)

9.5

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

110

230

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

VDD=-100V, ID=-7.3A,

RG=25Ω(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=-5.7A, VGS=0V

-5.0

Maximum Body-Diode Continuous Current

-5.7

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

-22.8

Body Diode Reverse Recovery Time

tRR

180

Body Diode Reverse Recovery Charge

QRR

VGS=0V, IS=-7.30 A

dIF/dt=100A/s (Note 1)

1.07

µC

Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2%

Note: 2. Essentially independent of operating temperature

7P20G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

7P20G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5

数据表下载

链接网址

7P20G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

7P20G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载