7N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-523.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Continuous

7

A

Drain Current

Pulsed (Note 1)

26.4

A

Single Pulsed (Note 2)

580

mJ

Avalanche Energy

Repetitive (Note 1)

16.7

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220 /TO-263

142

W

Power Dissipation

TO-220F/ TO-220F1

48

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

* Drain current limited by maximum junction temperature.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-263

62.5

°C/W

Junction to Ambient

TO-220F /TO-220F1

62.5

°C/W

TO-220/TO-263

0.88

°C/W

Junction to Case

TO-220F / TO-220F1

2.6

°C/W