10N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-119.E

PARAMETER

SYMBOL

RATINGS

UNIT

10N60-A

600

V

Drain-Source Voltage

10N60-B

650

V

Gate-Source Voltage

± 30

V

Avalanche Current (Note 2)

10

A

Continuous

10

A

Drain Current

Pulsed (Note 2)

38

A

Single Pulsed (Note 3)

700

mJ

Avalanche Energy

Repetitive (Note 2)

15.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

156

W

TO-220F/TO-220F1

50

W

Power Dissipation

TO-263

178

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

TO-220

0.8

°C/W

TO-220F/TO-220F1

2.5

°C/W

Junction to Case

TO-263

0.7

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

10N60-A

600

V

Drain-Source Breakdown Voltage

10N60-B

650

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.6

0.73

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

1570 2040 pF

Output Capacitance

166

215

pF

Reverse Transfer Capacitance

18

24

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

23

55

ns

Turn-On Rise Time

69

150

ns

Turn-Off Delay Time

144

300

ns

Turn-Off Fall Time

(Note 1, 2)

77

165

ns

Total Gate Charge

44

57

nC

Gate-Source Charge

6.7

nC

Gate-Drain Charge

(Note 1, 2)

18.5

nC