12NN10L-S08-R datasheet(1/4 Pages) UTC

部件名	12NN10L-S08-R

功能描述	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

12NN10

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-506.a

DUAL N-CHANNEL

ENHANCEMENT MODE POWER

MOSFET

DESCRIPTION

The UTC 12NN10 is a dual N-Channel enhancement mode power

MOSFET, it provides designer with fast switching speed, ruggedized

device design, low on-resistance and cost-effectiveness.

FEATURES

* Low Gate Charge (Typically 10nC)

* 2.5A, 100V, 150mΩ @ VGS=10V

* Fast Switching Speed

* Simple Drive Requirement

SYMBOL

SOP-8

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

4

5

6

7

8

Packing

12NN10L-S08-R

12NN10G-S08-R

SOP-8

S1

G1

S2

G2

D2

D1

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

类似零件编号 - 12NN10L-S08-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	12NN10G-S08-R	176Kb / 3P	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unisonic Technologies	12NN10	176Kb / 3P	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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类似说明 - 12NN10L-S08-R

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