12NN10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-506.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Continuous(Note 3)

2.5

A

Drain Current

Pulsed(Note 2)

10

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by Max. junction temperature.

3. Surface mounted on 1 in

pad.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient (Note 1)

62.5

°C/W

Note: 1. Surface mounted on 1 in

pad.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

10

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Drain-Source On-State Resistance (Note 1)

150

mΩ

Forward Transconductance

2.8

S

DYNAMIC PARAMETERS

Input Capacitance

420

672

pF

Output Capacitance

60

pF

Reverse Transfer Capacitance

40

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

10

16

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

4

nC

Turn-ON Delay Time (Note 1)

6.5

ns

Turn-ON Rise Time

7

ns

Turn-OFF Delay Time

14

ns

Turn-OFF Fall Time

3.5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 1)

1.3

V