25N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-448.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Source Voltage

100

V

Gate Source Voltage

±20

V

23

A

14.6

A

Pulsed Drain Current (Note 2)

80

A

41

W

Operating Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by max. junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°C/W

Junction to Case

3

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Breakdown Voltage Temperature

Coefficient

0.14

V/°C

25

µA

Drain-Source Leakage Current

100

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-Resistance (Note)

80

mΩ

Forward Transconductance

14

S

DYNAMIC PARAMETERS

Input Capacitance

1060 1700

pF

Output Capacitance

270

pF

Reverse Transfer Capacitance

8

pF

Gate Resistance

f=1.0MHz

1.5

2.3

Ω

SWITCHING PARAMETERS

Total Gate Charge (Note)

19

30

nC

Gate Source Charge

5

nC

Gate Drain Charge

6

nC

Turn-ON Delay Time

1

10

ns

Turn-ON Rise Time

28

ns

Turn-OFF Delay Time

17

ns

Turn-OFF Fall-Time

2

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

1.3

V

Reverse Recovery Time

90

ns

Reverse Recovery Charge

=0V,

dI/dt=100A/µs

380

nC

Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%