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19N10G-TQ2-R 数据表(PDF) 3 Page - Unisonic Technologies |
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19N10G-TQ2-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 19N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-261.D ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG 19 25 nC Gate Source Charge QGS 3.9 Gate Drain Charge QGD VDS=80V, ID=19A, VGS=10V (Note 1, 2) 9.0 Turn-ON Delay Time tD(ON) 7.5 25 ns Turn-ON Rise Time tR 150 310 ns Turn-OFF Delay Time tD(OFF) 20 50 ns Turn-OFF Fall-Time tF VDD=50V, ID=19A, RG=25Ω (Note 1, 2) 65 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A 1.5 V Maximum Body-Diode Continuous Current IS 15.6 A Maximum Pulsed Drain-Source Diode Forward Current ISM 62.4 A Body Diode Reverse Recovery Time tRR 78 ns Body Diode Reverse Recovery Charge QRR VGS= 0V, IS=19A, dIF/dt=100A/μs (Note 1) 200 nC Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2% Note: 2. Essentially independent of operating temperature |
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