75N75

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-097.E

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

75

V

Gate-Source Voltage

±20

V

Continuous Drain Current

80

A

Pulsed Drain Current (Note 2)

320

A

Single Pulsed Avalanche Energy (Note 3)

700

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

12

V/ns

TO-220/TO-263

300

W

Power Dissipation

TO-220F

45

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-263

62.5

°C /W

Junction to Ambient

TO-220F

62.5

°C /W

TO-220/TO-263

0.5

°C /W

Junction to Case

TO-220F

3.33

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

75

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

3.0

4.0

V

Static Drain-Source On-State Resistance

9.5

11

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

3700

pF

Output Capacitance

730

pF

Reverse Transfer Capacitance

f = 1MHz

240

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

25

ns

Turn-On Rise Time

100

ns

Turn-Off Delay Time

66

ns

Turn-Off Fall Time

30

ns

Total Gate Charge

117

160

nC

Gate-Source Charge

27

nC

Gate-Drain Charge

47

nC