80N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-468.a

PARAMETER

SYMBOL

TEST CONDITIONS

RATINGS

UNIT

80

Continuous Drain Current (Note 1)

80

A

Pulsed Drain Current (Note 2)

320

A

Avalanche Energy, Single Pulse (Note 2)

810

mJ

Gate Source Voltage (Note 3)

±20

V

Power Dissipation

300

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62

K/W

Junction to Case

0.5

K/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

80

V

0.01

1

Drain-Source Leakage Current

2

1

100

µA

Gate-Source Leakage Current

1

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.1

3.0

4.0

V

Static Drain-Source On-State Resistance

12

mΩ

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

4700

pF

Output Capacitance

1260

pF

Reverse Transfer Capacitance

580

pF

SWITCHING PARAMETERS

(Note 2)

Gate to Source Charge

25

37

nC

Gate to Drain Charge

69

116

nC

Total Gate Charge

144

180

nC

Gate Plateau Voltage

5.4

V

Turn-ON Delay Time

26

ns

Rise Time

50

ns

Turn-OFF Delay Time

61

ns

Fall-Time

30

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

80

Pulsed Current

320

A

Drain-Source Diode Forward Voltage (Note1)

0.9

1.3

V

Reverse Recovery Time (Note 2)

110

140

ns

Reverse Recovery Charge (Note 2)

470

590

nC

2. Defined by design. Not subject to production test.

3. Qualified at -20V and +20V.