3541-S08-R datasheet(3/6 Pages) UTC

3 / 6 page

3541

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-035.B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VDD

Output Short-Circuit Duration (Ta=25°C, PD=1W)

tsc(o)

Junction Temperature

150

°C

Operating Temperature

TOPR

-40 ~ +85

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

DIP-8

108

Junction to Ambient (Note)

SOP-8

θJA

210

°C/W

DIP-8

Junction to Case

SOP-8

θJC

°C/W

Note: θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.

ELECTRICAL CHARACTERISTICS

(VIN=0dBV, VCC=5V, Ta=25°C, f=1kHz, RL=32Ω, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Supply Voltage

VDD

3.0

5.0

6.0

Mute Terminal Voltage

VTM

0.3

0.7

1.6

Quiescent Current

VIN = 0Vrms

3.5

Mute Current

IMUTE

200

μA

Voltage Gain

GVCL

VIN=1Vrms, f =1kHz, RL=32Ω

-2

Differential Channel Voltage Gain

ΔGVCL

-0.5

0.5

Channel Separation

f =1 kHz

-90

-92.5

Mute Attenuation

ATT

VIN = 1Vrms, f =1 kHz, Mute=L

Ripple Rejection

FRR =100Hz, VRR = -20dBV

Output Noise Voltage

VNO

BW = 20~20kHz, VIN=0Vrms

-93 -85 dBV

Total Harmonic Distortion

THD

BW<120 kHz

0.03 0.1

Rated Output Power 1

PO1

RL=32Ω

Rated Output Power 2

PO2

THD+N = 0.1%, BW<120 kHz

RL=16Ω

105

110

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