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BC817L-X-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BC817L-X-AE3-R
功能描述  NPN GENERAL PURPOSE AMPLIFIER
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BC817L-X-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  BC817L-X-AE3-R Datasheet HTML 1Page - Unisonic Technologies BC817L-X-AE3-R Datasheet HTML 2Page - Unisonic Technologies BC817L-X-AE3-R Datasheet HTML 3Page - Unisonic Technologies BC817L-X-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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BC817
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-025.E
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCES
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current -Continuous
IC
1.5
A
SOT-23
310
mW
Collector Dissipation
SOT-323
PC
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
45
V
Collector-Base Breakdown Voltage
BVCES
IC=100μA,IE=0
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, Ic=0
5
V
VCB=20V
100
nA
Collector Cut-OFF Current
ICBO
VCB=20V,Ta=150°C
5
μA
ON CHARACTERISTICS
hFE1
IC=100mA,VCE=1.0V
See Classification
DC Current Gain
hFE2
IC =500mA, VCE=1.0V
40
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =500mA,IB=50mA
0.7
V
Base-Emitter On Voltage
VBE(ON)
IC =500mA, VCE=1.0V
1.2
V
CLASSIFICATION OF hFE1
RANK
16
25
40
RANGE
100-250
160-400
250-600



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