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BC808G-X-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BC808G-X-AE3-R
功能描述  SWITCHING AND AMPLIFIER APPLICATIONS
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BC808G-X-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  BC808G-X-AE3-R Datasheet HTML 1Page - Unisonic Technologies BC808G-X-AE3-R Datasheet HTML 2Page - Unisonic Technologies BC808G-X-AE3-R Datasheet HTML 3Page - Unisonic Technologies BC808G-X-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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BC807/BC808
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-026,D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
BC807
-50
V
Collector-Emitter Voltage
BC808
VCES
-30
V
BC807
-45
V
Collector-Emitter Voltage
BC808
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-800
mA
Collector Dissipation
PC
310
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
BC807
-45
V
Collector-Emitter Breakdown Voltage
BC808
BVCEO
IC=-10mA, IB=0
-25
V
BC807
-50
V
Collector-Emitter Breakdown Voltage
BC808
BVCES
IC=-0.1mA, VBE=0
-30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-0.1mA, IC=0
-5
V
Collector Cut-OFF Current
ICES
VCE=-25V, VBE=0
-100
nA
Emitter Cut-OFF Current
IEBO
VEB=-4V, IC=0
-100
nA
DC Current Gain
hFE1
hFE2
IC=-100mA, VCE=-1V
IC=-300mA, VCE=-1V
100
60
630
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-500mA, IB=-50mA
-0.7
V
Base-Emitter ON Voltage
VBE(ON)
IC=-300mA, VCE=-1V
-1.2
V
Current Gain Bandwidth Product
fT
VCE=-5V, IC=-10mA, f=50MHz
100
MHz
Output Capacitance
Cob
VCB=-10V, f=1MHz
12
pF
CLASSIFICATION OF hFE
RANK
16
25
40
hFE1
100-250
160-400
250-630
hFE2
60-
100-
170-



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