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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

400

V

V

DGR

T

J

= 25°C to 150°C; R

400

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

23

A

I

D100

T

14

A

I

DM

T

92

A

I

AR

23

A

E

AR

T

30

mJ

dv/dt

I

S

≤ I

5

V/ns

T

J

≤ 150°C, R

P

D

T

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6

g

Max lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD

This data reflects the objective technical specification and characterization data from engineering lots.

N-Channel Enhancement Mode

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

400

V

V

GS(th)

V

DS

= V

GS

,

I

2

4

V

I

GSS

V

GS

=

±20 V

±100

nA

I

DSS

V

DS

= V

DSS

T

25°C

25

µA

V

GS

= 0 V

T

250

µA

R

DS(on)

V

GS

= 10 V, I

0.20

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2%

IRFP 360

V

DSS

= 400 V

I

D25

= 23 A

R

Ω

Ω

Ω

Ω

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Features

•

Fast switching times

•

International standard packages

•

Low R

•

Rugged polysilicon gate cell structure

•

High commuting dv/dt rating

Applications

•

DC choppers

•

Motor Controls

•

Switch-mode and resonant-mode

•

Uninterruptable power supplies (UPS)

Advantages

•

Space savings

•

High power density

•

Easy to mount with 1 screw (isolated

mounting screw hole)

D (TAB)

Preliminary data

95509A (4/95)

IXYS reserves the right to change limits, test conditions, and dimensions.