IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN26N100P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

13

22

S

C

iss

11.9

nF

C

oss

V

GS

= 0V, V

690

pF

C

rss

60

pF

R

Gi

Gate input resistance

1.50

Ω

t

d(on)

Resistive Switching Times

45

ns

t

r

V

45

ns

t

d(off)

R

G

= 1

Ω (External)

72

ns

t

f

50

ns

Q

g(on)

197

nC

Q

gs

V

76

nC

Q

gd

85

nC

R

thJC

0.21

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

26

A

I

SM

Repetitive, pulse width limited by T

JM

104

A

V

SD

I

1.5

V

t

rr

300 ns

Q

RM

1.2

μC

I

RM

12

A

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

I

V

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