IXFN66N50Q2 datasheet(4/5 Pages) IXYS

4 / 5 page

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IXFN66N50Q2

Fig. 11. Capacitance

100

1000

10000

100000

VD S - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

100 120 140 160 180 200

Q G - nanoCoulombs

VDS = 250V

ID = 33A

IG = 10mA

Fig. 7. Input Admittance

100

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

VG S - Volts

TJ = 125°C

°C

- 40

°C

Fig. 8. Transconductance

100

120

140

I D - Amperes

TJ = - 40°C

°C

125

°C

Fig. 9. Source Current vs.

Source-To-Drain Voltage

100

120

140

160

180

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

VS D - Volts

TJ = 125°C

TJ = 25°C

Fig. 12. Forward-Bias Safe Operating Area

100

1000

100

1000

VD S - Volts

100µs

1m s

RDS(on) Limit

10m s

25µs

TJ = 150ºC

TC = 25ºC

Single Pulse

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