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IXFN110N60P3 数据表(PDF) 4 Page - IXYS Corporation |
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IXFN110N60P3 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXFN110N60P3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 20 40 60 80 100 120 140 160 180 3.54.0 4.55.0 5.5 6.0 6.5 7.0 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 ID - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 QG - NanoCoulombs VDS = 300V I D = 55A I G = 10mA Fig. 11. Capacitance 1 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1000 10 100 1,000 VDS - Volts TJ = 150ºC TC = 25ºC Single Pulse 100µs 1ms RDS(on) Limit |
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