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IXGH100N30B3 数据表(PDF) 4 Page - IXYS Corporation |
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IXGH100N30B3 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXGH100N30B3 IXYS REF: G_200N30PB(75)7-05-08-D Fig. 7. Transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 IC - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 8. Gate Charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VCE = 150V I C = 100A I G = 10mA Fig. 9. Reverse-Bias Safe Operating Area 0 20 40 60 80 100 120 140 160 180 200 220 50 100 150 200 250 300 350 VCE - Volts TJ = 125ºC RG = 2Ω dV / dt < 10V / ns Fig. 10. Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VCE - Volts f = 1 MHz Cies Coes Cres Fig. 12. Maximum Transient Thermal Impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Forward-Bias Safe Operating Area 10 100 1000 1 10 100 1000 VCE - Volts TJ = 150ºC TC = 25ºC Single Pulse VCE(sat) Limit 1µs 10µs 100µs 1ms |
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