R5F2L387CDFA datasheet(51/75 Pages) RENESAS

51 / 75 page

R8C/L35C Group, R8C/L36C Group, R8C/L38C Group, R8C/L3AC Group

5. Electrical Characteristics

R01DS0095EJ0101 Rev.1.01

Page 51 of 72

Apr 15, 2011

Notes:

Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte

writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the

programming/erasure endurance still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further

reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the

number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

−40°C for D version.

The data hold time includes time that the power supply is off or the clock is not supplied.

Figure 5.2

Time delay until Suspend

Table 5.7

Flash Memory (Data flash Block A to Block D) Characteristics

(VCC = 2.7 to 5.5 V and Topr =

−20 to 85°C (N version) / −40 to 85°C (D version), unless

otherwise specified.)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

—

Program/erase endurance (1)

10,000 (2)

——

times

—

Byte program time

(program/erase endurance

≤ 1,000 times)

—

160

1500

µs

—

Byte program time

(program/erase endurance

> 1,000 times)

—

300

1500

µs

—

Block erase time

(program/erase endurance

≤ 1,000 times)

—0.2

—

Block erase time

(program/erase endurance

> 1,000 times)

—0.3

td(SR-SUS)

Time delay from suspend request until

suspend

—

5 + CPU clock

× 3 cycles

—

Interval from erase start/restart until

following suspend request

0—

—

Time from suspend until erase restart

—

30+CPU clock

× 1 cycle

µs

td(CMDRST-

READY)

Time from when command is forcibly

terminated until reading is enabled

—

30+CPU clock

× 1 cycle

µs

—

Program, erase voltage

2.7

—

5.5

—

Read voltage

1.8

—

5.5

—

Program, erase temperature

−20 (6)

—85

°C

—

Data hold time (7)

Ambient temperature = 55

°C

—

year

FST6 bit

Suspend request

(FMR21 bit)

Fixed time

Clock-dependent

time

Access restart

FST6, FST7: Bit in FST register

FMR21: Bit in FMR2 register

FST7 bit

td(SR-SUS)

R5F2L387CDFA 数据表(PDF) 51 Page - Renesas Technology Corp

R5F2L387CDFA 数据表(HTML) 51 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75

数据表下载

链接网址

R5F2L387CDFA 数据表(PDF) 51 Page - Renesas Technology Corp

R5F2L387CDFA 数据表(HTML) 51 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75

数据表 下载

链接网址

数据表下载