R5F2136CMDFD datasheet(49/61 Pages) RENESAS

49 / 61 page

R8C/36M Group

5. Electrical Characteristics

Under development Preliminary document

Specifications in this document are tentative and subject to change.

R01DS0086EJ0010 Rev.0.10

Page 49 of 58

Mar 09, 2011

Note:

1. 2.7 V

≤ VCC < 4.2 V, Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), and f(XIN) = 10 MHz, unless otherwise

specified.

Table 5.25

Electrical Characteristics (3) [2.7 V

≤ VCC < 4.2 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H” voltage

Other than XOUT

Drive capacity High IOH =

−5 mA

VCC

− 0.5

—

VCC

Drive capacity Low

IOH =

−1 mA

VCC

− 0.5

—

VCC

XOUT

IOH =

−200 µA1.0

—

VCC

VOL

Output “L” voltage

Other than XOUT

Drive capacity High IOL = 5 mA

—

0.5

Drive capacity Low

IOL = 1 mA

—

0.5

XOUT

IOL = 200

µA—

—

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT2,

INT3, INT4,

KI0, KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRDIOA0, TRDIOB0,

TRDIOC0, TRDIOD0,

TRDIOA1, TRDIOB1,

TRDIOC1, TRDIOD1,

TRCTRG, TRCCLK,

TRFI, TRGIOA,

TRGIOB, ADTRG,

RXD0, RXD1, RXD2,

CLK0, CLK1, CLK2,

SSI, SCL, SDA, SSO

VCC = 3.0 V

0.1

0.4

—

RESET

VCC = 3.0 V

0.1

0.5

—

IIH

Input “H” current

VI = 3 V, VCC = 3.0 V

—

4.0

µA

IIL

Input “L” current

VI = 0 V, VCC = 3.0 V

—

−4.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 3.0 V

168

Ω

RfXIN

Feedback

resistance

XIN

—

0.3

—

Ω

RfXCIN

Feedback

resistance

XCIN

—

Ω

VRAM

RAM hold voltage

During stop mode

1.8

—

R5F2136CMDFD 数据表(PDF) 49 Page - Renesas Technology Corp

R5F2136CMDFD 数据表(HTML) 49 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61

数据表下载