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SDR621 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SDR621 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0027F DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR62 __ __ __ __ __ └ Screening 2/ __ TX TXV S = Not Screened = TX Level = TXV Level = S Level │ │ │ │ │ └ Lead Options __= Straight Leads DB = Down Bent UB = Up Bent │ │ │ │ │ │ │ │ └ Package M = TO-254 Z = TO-254Z │ │ │ │ │ │ │ │ │ │ │ └ Configuration CT = Common Cathode CA = Common Anode D = Doubler DR = Doubler Reverse │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ └ Family/Voltage 0 = 100V 1 = 150V 2 = 200V SDR620CTM&Z thru SDR622CTM&Z 40 AMP, 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER FEATURES: • Replaces 1N6657, 1N6658, 1N6659 Devices • Hyper Fast Recovery: 35 ns Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bonds • TX, TXV, or Space Level Screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage 3/ SDR620 SDR621 SDR622 VRRM VRWM VR 100 150 200 Volts Average Rectified Forward Current 4/ (Resistive Load, 60 Hz Sine Wave, TC= 100ºC) IO 40 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA= 25ºC, per leg) IFSM 200 Amps Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Maximum Total Thermal Resistance Junction to Case, each individual diode Junction to Case 4/ RθJC 2.0 1.2 ºC/W NOTES: 1/ For ordering Information, Price, and Availability, Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ Higher voltages available. 4/ Both Legs Tied Together. TO-254 TO-254Z |
类似零件编号 - SDR621 |
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类似说明 - SDR621 |
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