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TLRH17TP 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLRH17TP 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() TLRH17TP(F),TLRMH17TP(F),TLSH17TP(F),TLOH17TP(F),TLYH17TP(F) 2009-11-30 2 Electrical and Optical Characteristics (Ta = 25°C) Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR λd λP Δλ Product Name Min Typ. Max Typ. Typ. IF Min Typ. IF Typ. Max IF Max VR TLRH17TP(F) ― 630 ― 644 13 20 850 2000 20 1.9 2.4 20 50 4 TLRMH17TP(F) ― 626 ― 636 13 20 850 3200 20 1.9 2.4 20 50 4 TLSH17TP(F) ― 613 ― 623 13 20 1530 4500 20 2.0 2.4 20 50 4 TLOH17TP(F) ― 605 ― 612 13 20 1530 5000 20 2.0 2.4 20 50 4 TLYH17TP(F) 581 587 595 590 13 20 1530 4800 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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