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TLRH62T 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLRH62T 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TL(RH,OH,YH)62T(F) 2008-12-26 2 Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Forward current derating Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Part Number λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRH62T(F) 630 644 13 20 47.6 180 20 1.9 2.4 20 50 4 TLOH62T(F) 605 612 13 20 153 550 20 2.0 2.4 20 50 4 TLYH62T(F) 587 590 13 20 153 400 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 seconds max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. Part Number Forward Current IF (mA) (Note 1) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRH62T(F) TLOH62T(F) TLYH62T(F) 50 4 120 −40 to 100 −40 to 120 Ambient temperature Ta (°C) 0 60 0 40 80 20 120 20 40 60 80 100 IF – Ta |
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