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SDR4G 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SDR4G 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR4 __ __ __ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level ⏐ ⏐ ⏐ ⏐ L Package ___ = Axial SMS = Surface Mount Square Tab ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Voltage G = 400 V J = 600 V K = 800 V M = 1000 V N = 1200 V SDR4G - SDR4N and SDR4GSMS – SDR4NSMS 3 AMP 400 – 1200 Volts 50-80 nsec ULTRA FAST RECTIFIER Features: • Ultra Fast Recovery: 50-80 nsec Max. @ 25°C 85-125 nsec Max. @ 100°C • Single Chip Construction • PIV to 1200 Volts • Low Reverse Leakage Current • Hermetically Sealed • For High Efficiency Applications • Available in Axial Leaded & Surface Mount versions • Metallurgically Bonded • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR4G SDR4J SDR4K SDR4M SDR4N VRRM VRWM VR 400 600 800 1000 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Io 3 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 75 Amps Operating & Storage Temperature Top & Tstg -65 to +175 ºC Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab RθJL RθJE 20 14 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Leaded SMS (Square) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC |
类似零件编号 - SDR4G |
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类似说明 - SDR4G |
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