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SFS2326 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SFS2326 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page  NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SCR004C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SFS23 ___ ___ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level │ │ │ │ │ └ Voltage/Family 23 = 50V 24 =100V 26 = 200V 27 = 250V 28 = 300V 29 = 400V SFS2323 thru SFS2329 1.6 AMP SILICON CONTROLLED RECTIFIER 50 ─ 400 VOLTS FEATURES: • Low-Level Gate Characteristics • IGT = 200 μA (Max) @ 25 oC • Low Holding Current I H = 1 mA (Max) @ 25oC • Anode Common to Case • Hermetically Sealed MAXIMUM RATINGS Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage SFS2323 SFS2324 SFS2326 SFS2327 SFS2328 SFS2329 VDRM VRRM 50 100 200 250 300 400 Volts Non-Repetitive Peak Reverse Blocking Voltage (t < 5.0 ms) SFS2323 SFS2324 SFS2326 SFS2327 SFS2328 SFS2329 VRSM 75 150 300 350 400 500 Volts RMS On-State Current (All Conduction Angles) IT (RMS) 1.6 Amps Peak Non-Repetitive Surge Current (One Cycle, 60 Hz, TC = 80 oC ) ITSM 15 Amps Peak Gate Power PGM 0.1 Watts Average Gate Power PG (AV) 0.01 Watts Peak Gate Current IGM 0.1 Amps Peak Gate Voltage VGM 6.0 Volts Operating Junction Temperature Range TJ -65 to +125 oC Storage Temperature Range Tstg -65 to +150 oC Thermal Resistance, Junction to Case RθJC 30 oC/W NOTES: 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. TO-5 |
类似零件编号 - SFS2326 |
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类似说明 - SFS2326 |
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