SFT4100 datasheet(2/2 Pages) SSDI

2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0105B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT4100 Series

Electrical Characteristic

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

IC = 200mA

BVCEO

165

200

––

Volts

Collector – Base Breakdown Voltage

IC = 200µA

BVCBO

250

––

Volts

Emitter – Base Breakdown Voltage

IE = 50mA

BVEBO

––

Volts

Collector – Cutoff Current

VCE = 160 V

ICEO

––

0.03

1000

Collector – Cutoff Current

VCE = 250 V, VEB = 1.5 V

VCE =250V, VEB =1.5V, TC= 125C

ICEX

––

0.01

1.0

1000

5000

Emitter – Cutoff Current

VEB = 5 V

IEBO

––

0.01

1000

DC Current Gain *

VCE = 4V, IC = 5A

VCE = 4V, IC = 8A

hFE

––

Collector – Emitter Saturation Voltage *

IC = 5.0A, IB = 500mA

IC = 8.0A, IB = 1.0A

VCE(Sat)

––

0.25

0.35

1.2

1.6

Volts

Base – Emitter Saturation Voltage *

IC = 8.0A, IB = 1.0A

VBE(Sat)

––

1.12

2.0

Volts

Current Gain Bandwidth Product

VCE = 15V, IC = 1.0A, f = 10MHz

––

MHz

Clamped ES/B Collector Current

VClamp = 200V, L = 500 uH

Safe Operating Area

VCE = 30V, IC = 4.0A, t = 1s

VCE = 135V, IC = 0.15A, t= 1s

SOA1

SOA2

ON Time

tON

––

100

1000

nsec

Storage Time

––

1200

1700

nsec

Fall Time

VCC = 150V,

IC = 8A,

IB1 = IB2 = 1A

––

800

nsec

CASE OUTLINES:

TO-3

SMD1

TO-254

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