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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX 2N5116 

LOW ON RESISTANCE 

LOW CAPACITANCE 

6pF 

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐55°C to +200°C 

Operating Junction Temperature ‐55°C to +200°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

500mW 

MAXIMUM CURRENT

Gate Current (Note 1) 

MAXIMUM VOLTAGES 

Gate to Drain Voltage 

Gate to Source Voltage 

LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage 

30 

‐‐ 

‐‐ 

 

 

V 

Gate to Source Cutoff Voltage 

1 

‐‐ 

4 

Gate to Source Forward Voltage 

‐‐ 

‐0.7 ‐1 

 

 

Drain to Source On Voltage 

‐‐ 

‐1.0 

‐‐ 

‐‐ 

‐0.7 

‐‐ 

‐‐ 

‐0.5 ‐0.6 

Drain to Source Saturation Current (Note 2) ‐5 

‐‐ 

‐25 

mA 

VDS = ‐15V, VGS = 0V 

Gate Reverse Current 

‐‐ 

5 

500  

 

pA 

 

VGS = 20V,  VDS = 0V 

Gate Operating Current 

‐‐ 

‐5 

‐‐ 

VDS = ‐15V,  ID = ‐1mA 

 

 

Drain Cutoff Current 

‐‐ 

‐10 

‐‐ 

VDS = ‐15V, VGS = 12V 

‐‐ 

‐10 

‐‐ 

VDS = ‐15V, VGS = 7V 

‐‐ 

‐10 ‐500 

VDS = ‐15V, VGS = 5V 

Drain to Source On Resistance 

‐‐ 

‐‐ 

150 Ω 

ID = ‐1mA,   VGS = 0V 

LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Forward Transconductance 

‐‐ 

4.5 

‐‐ 

mS 

Output Conductance 

‐‐ 

20 

‐‐ 

µS 

Drain to Source On Resistance 

‐‐ 

‐‐ 

150 Ω 

Input Capacitance 

‐‐ 

20 

25  

pF 

 

 

Reverse Transfer Capacitance 

‐‐ 

5 

‐‐ 

‐‐ 

6 

‐‐ 

‐‐ 

6 

7 

Equivalent Noise Voltage 

‐‐ 

20 

‐‐ 

nV/√Hz 

LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC  

UNITS 

CONDITIONS 

Turn On Time 

12  

 

ns 

 

See Switching Circuit 

Turn On Rise Time 

30 

Turn Off Time 

10 

Turn Off Fall Time 

50 

                                                                                                                 

LS5116 SWITCHING CIRCUIT PARAMETERS                                                                                                                          

8V  

2kΩ 

 

390Ω 

 

LS5116

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N5116

This analog switch is designed for inverting switching

into inverting input of an Operational Amplifier.

The TO-92 provides a low cost option and ease of

manufacturing.

(See Packaging Information).

LS5116 Applications:

Analog Switches

Commutators

Choppers

LS5116 Benefits:

Low On Resistance

Switches directly from TTL logic

Available Packages:

LS5116 in TO-92

LS5116 in bare die.

Please contact Micross for full

package and die dimensions

Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% 

SWITCHING TEST CIRCUIT

TO-92 (Bottom View)