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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C 

LOW NOISE (10KHz) 

HIGH TRANSCONDUCTANCE (100MHz) 

ABSOLUTE MAXIMUM RATINGS 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation (Total) 

500mW 

Maximum Currents 

Gate Current 

50mA 

Maximum Voltages 

Gate to Drain ‐25V 

Gate to Source ‐25V 

  

  

  

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Differential Gate to Source Cutoff Voltage 

‐‐ 

‐‐ 

40 

mV 

 

Differential Gate to Source Cutoff  

Voltage Change with Temperature 

‐‐ 

‐‐ 

40 

µV/°C 

VDG = 10V, ID = 5mA      

TA = ‐55°C to +125°C 

 

Gate to Source Saturation Current Ratio 

0.95 

‐‐ 

1 

% 

VDS = 10V, VGS = 0V 

Differential Gate Current 

‐‐ 

‐‐ 

20 

nA 

VDG = 10V, ID = 5mA      

TA = +125°C  

 

Forward Transconductance Ratio

2 

0.95 

‐‐ 

1 

% 

VDS = 10V, ID = 5mA, f = 1kHz 

CMRR 

Common Mode Rejection Ratio 

‐‐ 

85 

‐‐ 

dB 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐25 

‐‐ 

 

 

V 

 

Gate to Source Cutoff Voltage ‐1 

‐‐ 

‐5 

Gate to Source Forward Voltage 

‐‐ 

0.7 

‐‐ 

Gate to Source Voltage ‐0.3 

‐‐ 

‐4 

Gate to Source Saturation Current

7 

‐‐ 

40 

mA 

Gate Leakage Current

‐‐ 

‐1 ‐50  

pA 

Gate Operating Current 

‐‐ 

‐1 ‐50 

Forward Transconductance 

4000 

‐‐ 

10000  

µS 

 

 

4000 

‐‐ 

10000 

Output Conductance 

‐‐ 

‐‐ 

100 

‐‐ 

‐‐ 

150 

Input Capacitance 

‐‐ 

‐‐ 

5 

pF 

 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

1.2 

NF 

Noise Figure 

‐‐ 

‐‐ 

1 

dB 

Equivalent Input Noise Voltage 

‐‐ 

7 

20 

nV/√Hz 

‐‐ 

4 

10 

Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired      2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%

3. Assumes smaller value in numerator 

 

 

LS5912C

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix & National 2N5912C

LS5912C Applications:

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

The LS5912C are monolithic dual JFETs. The

monolithic dual chip design reduces parasitics and

gives better performance at very high frequencies while

ensuring extremely tight matching. These devices are

an excellent choice for use as wideband differential

amplifiers in demanding test and measurement

applications. The LS5912C is a direct replacement for

discontinued Siliconix and National LS5912C.

The 8 Pin P-DIP provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

(See Packaging Information).

Please contact Micross for full package and die dimensions:

Available Packages:

LS5912C in PDIP

LS5912C available as bare die