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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR INTERSIL LSID100 

REVERSE LEAKAGE CURRENT 

REVERSE BREAKDOWN VOLTAGE 

REVERSE CAPACITANCE 

ABSOLUTE MAXIMUM RATINGS (Note 1) 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +200°C 

Operating Junction Temperature ‐55°C to +150°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

300mW 

Maximum Currents

Forward Current  

20mA 

Reverse Current 

100µA 

Maximum Voltages 

Reverse Voltage 

30V 

Diode to Diode Voltage 

±50V 

 

LSID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Reverse Breakdown Voltage 

30 

‐‐ 

‐‐ 

V 

IR = 1µA 

Forward Voltage 

0.8 

‐‐ 

1.1 

V 

IF = 10mA 

Reverse Leakage Current 

‐‐ 

0.1 

‐‐ 

 

pA 

VR = 1V 

‐‐ 

2.0 

10 

VR = 10V 

Differential Leakage Current 

‐‐ 

‐‐ 

3 

Total Reverse Capacitance(Note 2) 

‐‐ 

0.75 

1 

pF 

VR = 10V, f = 1MHz 

The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode

LSID100

LOW LEAKAGE

PICO-AMP DUAL DIODE

Available Packages:

LSID100 in TO-78

LSID100 available as bare die

Please contact Micross for

full package and die dimensions

Linear Systems replaces discontinued Intersil LSID100

Note 1 - Absolute maximum ratings are limiting values above which LSID100 serviceability may be impaired.

Note 2 - Design reference only, not 100% tested

Micross Components Europe

Tel: +44 1603 788967

The LSID100 low-leakage monolithic dual diode

provides a superior alternative to conventional diode

technology when reverse current (leakage) must be

minimized. In addition the monolithic dual construction

allows excellent capacitance matching per diode. The

LSID100 features a leakage current of 0.1 pA and is

well suited for use in applications such as input

protection for operational amplifiers.

LSID100 Benefits:

Negligible Circuit Leakage Contribution

Circuit “Transparent” Except to Shunt

High-Frequency Spikes

Simplicity of Operation

LSID100 Applications:

Op Amp Input Protection

Multiplexer Overvoltage Protection

FIGURE 1 – Operational Amplifier Protection 

 

Input Differential Voltage limited to 0.8V (typ) by Diodes LSID100 

FIGURE 2  – Sample & Hold Circuit 

 

Typical Sample and Hold circuit with clipping. LSID100 diodes 

reduce offset voltages fed capacitively from the LSID100 switch 

gate.

TO-78 (Bottom View)

Note pins 3 & 5 must not be connected, in 

any fashion or manner, to any circuit or node