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GMBAS70 数据表(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

部件名 GMBAS70
功能描述  SCHOTTKY DIODE
PDF  2 Pages
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制造商  GSME [Guilin Strong Micro-Electronics Co., Ltd.]
网页  http://www.gsme.com.cn
标志 GSME - Guilin Strong Micro-Electronics Co., Ltd.

GMBAS70 数据表(HTML) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

  GMBAS70 Datasheet HTML 1Page - Guilin Strong Micro-Electronics Co., Ltd. GMBAS70 Datasheet HTML 2Page - Guilin Strong Micro-Electronics Co., Ltd.  
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桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin
Guilin
Guilin
Guilin
Strong
Strong
Strong
Strong
Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GMBAS70
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
DIODE
DIODE
DIODE
DIODE
肖特基二極管(BA
(BA
(BA
(BA
S70
S70
S70
S70
)))
)
▉
FEATURES
特點
▉DEVICE
DEVICE
DEVICE
DEVICE
MARKING
MARKING
MARKING
MARKING
打標
▉ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
電特性
(T
(T
(T
(T
A
A
A
A
=
=
=
=
25
25
25
25
℃ unless
unless
unless
unless
otherwise
otherwise
otherwise
otherwise
noted
noted
noted
noted
如無特殊說明，溫度爲 25℃)))
)
▉
SOT-23
内部结构
1
Characteristic 特性參數
Symbol 符號
Max 最大值
Unit 單位
Power dissipation 耗散功率
PD(Ta=25℃)
225
mW
Forward Current 正向電流
IF
70
mA
Reverse Voltage 反向電壓
VR
70
V
Junction and Storage Temperature
結溫和儲藏溫度
TJ,Tstg
-55to+150℃
BA
BA
BA
BA
S70
S70
S70
S70
=
=
=
=
BE
BE
BE
BE
Characteristic
特性參數
Symbol
符號
Min
最小值
Max
最大值
Unit
單位
Reverse Breakdown Voltage 反向擊穿電壓
(IR=10uA)
V(BR)
70
—
V
Reverse Leakage Current 反向漏電流
(VR=50V)
(VR=70V)
IR
—
0.1
10
uA
Forward Voltage(Test Condition)正向電壓
IF= 1mAdc
IF= 10mAdc
IF= 15mAdc
VF
—
410
750
1000
mV
Diode Capacitance 二極體電容
(VR=1V, f=1MHz)
CD
—
2
pF
Reverse Recovery Time 反向恢復時間
Trr
—
5
nS


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