MMBTH10 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

MMBTH10

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TAAAA=25

=25

=25℃ unless

unless

unless otherwise

otherwise

otherwise noted

noted

noted 如無特殊說明，溫度爲 25℃))))

1. FR-5=1.0×0.75×0.062in.

Alumina=0.4×0.3×0.024in.99.5%alumina.

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Emitter Cutoff Current

發射極截止電流(VEB=2.0v,IC=0)

IEBO

—

100

Collector Cutoff Current

集電極截止電流(VCB=25v,IE=0)

ICBO

—

100

Collector-Base Breakdown Voltage

集電極基極擊穿電壓(Ic=100uA)

V(BR)CBO

—

Collector-Emitter Breakdown Voltage

集電極發射極擊穿電壓(Ic=1mA)

V(BR)CEO

—

Emitter-Base Breakdown Voltage

發射極基極擊穿電壓(IE=10uA)

V(BR)EBO

—

Collector Saturation Voltage

集電極飽和壓降(Ic=4mAdc,IB=0.4mA)

VCE(sat)

—

0.5

Vdc

DC Current Gain 直流電流增益

(VCE=10v,IC=4mA)

HFE

—

Gain Bandwidth Product

增益帶寬乘積(VCE=10v,IC=4mA)

650

—

MHz

Output Capacitance 輸出電容

(VCB=10v,IE=0,f=1.0MHz)

Cob

—

0.7

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