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SSR20C 数据表(PDF) 1 Page - Solid States Devices, Inc

部件名 SSR20C
功能描述  Schottky Silicon Carbide
PDF  2 Pages
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制造商  SSDI [Solid States Devices, Inc]
网页  http://www.ssdi-power.com
标志 SSDI - Solid States Devices, Inc

SSR20C 数据表(HTML) 1 Page - Solid States Devices, Inc

  SSR20C Datasheet HTML 1Page - Solid States Devices, Inc SSR20C Datasheet HTML 2Page - Solid States Devices, Inc  
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0049B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR20C __ __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package
S = SMD1
M = TO-254
Configuration
CT = Centertap
Voltage
100 = 1000 V
120 = 1200 V
SSR20C Series
20 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
FEATURES:
• 1200 Volt Silicon Carbide Schottky Rectifier
• Average Output Current 20 Amps
• No Reverse Recovery
• No Forward Recovery
• No Switching Time Change Over
Temperature
• Small Package Size
• TX, TXV, and Space Level Screening
Available. Consult Factory.
MAXIMUM RATINGS3/
Symbol
Value
Units
Peak Repetitive and Peak Reverse Voltage
SSR20C100CT
SSR20C120CT
VRRM
VR
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Per Leg
Total
IO
10
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25
oC)
IFSM
120
Amps
Operating & Storage Temperature
TOP & Tstg
-55 to +250
oC
Junction Temperature
TJ
-55 to +250
oC
Maximum Thermal Resistance
(Junction to Case)
RθJC
1.0
oC/W
SMD1 (S)
TO-254 (M)
NOTES:
* Pulse Test: Pulse Width = 300
μsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC


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