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SSR2008Z 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SSR2008Z 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0091J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SSR20 __ __ __ __ │ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Options __ = Straight Leads, DB = Bent Down UB = Bent Up Package M = TO-254 Z = TO-254Z Voltage / Family 08 = 80V 09 = 90V 10 = 100V SSR2008M, SSR2008Z SSR2009M, SSR2009Z SSR2010M, SSR2010Z 20 AMPS 100 VOLTS SCHOTTKY RECTIFER FEATURES: • PIV: 100 Volts • Low Reverse Leakage Current • Low Forward Voltage Drop • Guard Ring for Overvoltage Protection • Isolated Hermetically Sealed Package • Available in Glass or Ceramic Seal Packages • Custom Lead Forming Available • Eutectic Die Attach • 175°C Operating Junction Temperature • TX, TXV, and Space Level Screening Available MAXIMUM RATINGS3/ Symbol Value Unit Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR2008M & Z SSR2009M & Z SSR2010M & Z VRRM VRWM VR 80 90 100 Volts Average Rectified Forward Current 1/4/ (Resistive Load, 60 Hz, Sine Wave, TC = 25 °C) IO 20 Amps Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 300 Amps Operating and Storage Temperature TOP & Tstg -65 to +175 °C Maximum Thermal Resistance4/ (Junction to Case) RθJC 1.2 °C/W NOTE: TO-254 TO-254Z 1/ Derate linearly at 1A/ °C for T C > 155 °C 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ All electrical characteristics @25 °C, unless otherwise specified 4/ Pins 2 and 3 externally connected together |
类似零件编号 - SSR2008Z |
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类似说明 - SSR2008Z |
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