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2N3019CSM 数据表(PDF) 2 Page - Seme LAB

部件名 2N3019CSM
功能描述  HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
PDF  2 Pages
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制造商  SEME-LAB [Seme LAB]
网页  http://www.semelab.co.uk
标志 SEME-LAB - Seme LAB

2N3019CSM 数据表(HTML) 2 Page - Seme LAB

  2N3019CSM Datasheet HTML 1Page - Seme LAB 2N3019CSM Datasheet HTML 2Page - Seme LAB  
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Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
IC = 10mA
IC = 10µA
IE = 10µA
IC = 0
VCB = 90V
VBE = 0
VCB = 90V
VBE = 0
Tamb = 150°C
VEB = 5V
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 0.1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 500mA
VCE = 10V
IC = 1A
VCE = 10V
IC = 150mA
VCE = 0.5V
VCEO*
Collector – Emitter Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
Tamb = –55°C
80
140
7
10
10
10
0.20
0.50
1.1
50
90
100
300
50
15
40
V
V
V
nA
µA
nA
V
V
—
fT
Transition Frequency
CEBO
Capacitance
CCBO
Input Capacitance
hfe
Small Signal Current Gain
NF
Noise Figure
IC = 50mA
VCE = 10V
f = 20MHz
VEB = 0.5V IC = 0
f = 1.0MHz
VCB = 10V
IE = 0
f = 1.0MHz
IC = 1mA
VCE = 5V
f = 1kHz
IC = 100µA VCE = 10V
f = 1kHz
Rg = 1KΩ
100
60
12
80
400
4
MHz
pF
pF
—
db
t* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)



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