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2N3209CSM 数据表(PDF) 2 Page - Seme LAB

部件名 2N3209CSM
功能描述  HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
PDF  2 Pages
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制造商  SEME-LAB [Seme LAB]
网页  http://www.semelab.co.uk
标志 SEME-LAB - Seme LAB

2N3209CSM 数据表(HTML) 2 Page - Seme LAB

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Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ton
Turn-on Time
toff
Turn-off Time
VCC = 2V
IC = 30mA
IB1 = 1.5mA
VCC = 2V
IC = 30mA
IB1 = IB2 = 1.5mA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
IC = 10mA
IC = 10µA
IE = 10µA
IC = 0
VCE = 10V
VBE = 0
VCE = 10V
VBE = 0
TC = 125°C
IC = 10mA
IB = 1mA
IC = 30mA
IB = 3mA
IC = 100mA
IB = 10mA
IC = 10mA
IB = 1mA
IC = 30mA
IB = 3mA
IC = 100mA
IB = 10mA
IC = 10mA
VCE = 0.3V
IC = 30mA
VCE = 0.5V
IC = 100mA
VCE = 1V
IC = 30mA
VCE = 0.5V
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICES*
Collector Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
Tamb = –55°C
-20
-20
-4
80
10
0.15
0.20
0.60
0.78
0.98
0.85
1.2
1.7
25
30
120
15
12
V
V
V
nA
µA
V
V
—
fT
Transition Frequency
CEBO
Capacitance
CCBO
Input Capacitance
IC = 30mA
VCE = 10V
f = 100MHz
VEB = 0.5V
IC = 0
f = 1.0MHz
VCB = 5V
IE = 0
f = 1.0MHz
400
6.0
5.0
MHz
pF
pF
60
90
ns
ns
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)



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