USB2SER Data Sheet, Rev. 0

Electrical Characteristics

Freescale Semiconductor

16

Solving Equation 1 and Equation 2 for K gives:

Eqn. 3

A.4

Electrostatic Discharge (ESD) Protection Characteristics

Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling

precautions must be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices

can withstand exposure to reasonable levels of static without suffering any permanent damage. This device was qualified to

AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device

specification requirements. Complete DC parametric and functional testing is performed per the applicable device specification

at room temperature followed by hot temperature, unless specified otherwise in the device specification.

A.5

DC Characteristics

This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various

operating modes.

Table A-4. ESD Protection characteristics

Rating

Symbol

Value

Unit

ESD Target for Machine Model (MM) — MM

circuit description

200

V

ESD Target for Human Body Model (HBM)

— HBM circuit description

2000

V

Table A-5. ESD Protection characteristics

Num

C

Parameter

Symbol

Min

Max

Unit

1

Operating voltage

—

2.7

—

5.5

V

2

P

Output high voltage

5 V, ILoad = –10 mA

3 V, ILoad = –3 mA

5 V, ILoad = –2 mA

3 V, ILoad = –0.4 mA

V

V

V

V

—

—

—

—

—

—

—

—

V

Output low voltage — Low drive (PTxDSn = 0)

5 V, ILoad = 2 mA

3 V, ILoad = 0.6 mA

5 V, ILoad = 0.4 mA

3 V, ILoad = 0.24 mA

1.5

1.5

0.8

0.8

—

—

—

—

—

—

—

—

3

P

Output low voltage — High drive (PTxDSn = 1)

5 V, ILoad = 10 mA

3 V, ILoad = 3 mA

5 V, ILoad = 2 mA

3 V, ILoad = 0.4 mA

1.5

1.5

0.8

0.8

—

—

—

—

—

—

—

—

V

KP

D

T

A

273

C

+





JA

P

D



2



+

=