2N7002CSM datasheet(1/2 Pages) SEME-LAB

部件名	2N7002CSM

功能描述	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

制造商	SEME-LAB [Seme LAB]

网页	http://www.semelab.co.uk

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Prelim. 7/98

2N7002CSM

* Pulse width limited by maximum junction temperature.

N–CHANNEL

ENHANCEMENT MODE

MOS TRANSISTOR

FEATURES

• V(BR)DSS = 60V

• RDS(ON) = 7.5Ω

Ω

• ID = 0.115A

VDS

Drain – Source Voltage

VGS

Gate – Source Voltage

ID

Drain Current

@ TCASE = 25°C

ID

Drain Current

@ TCASE = 100°C

IDM

Pulsed Drain Current *

PD

Power Dissipation

@ TCASE = 25°C

PD

Power Dissipation

@ TCASE = 100°C

Tj

Operating Junction Temperature Range

Tstg

Storage Temperature Range

60V

±40V

±0.115A

±0.073A

0.8A

200mW

80mW

–55 to 150°C

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)

SOT23 CERAMIC

(LCC1 PACKAGE)

21

0.51 ± 0.10

(0.02 ± 0.004)

0.31

(0.012)

1.91 ± 0.10

(0.075 ± 0.004)

3.05 ± 0.13

(0.12 ± 0.005)

1.02 ± 0.10

(0.04 ± 0.004)

1.40

(0.055)

max.

A

0.31

(0.012)

rad.

A =

3

PAD 1 – Gate

Underside View

PAD 2 – Source

PAD 3 – Drain

类似零件编号 - 2N7002CSM

制造商	部件名	数据表	功能描述
NXP Semiconductors	2N7002CK	83Kb / 13P	60 V, 0.3 A N-channel Trench MOSFET Rev. 01-11 September 2009
NXP Semiconductors	2N7002CK	83Kb / 13P	60 V, 0.3 A N-channel Trench MOSFET Rev. 01-11 September 2009

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