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IPI60R099CP 数据表(PDF) 1 Page - Infineon Technologies AG |
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IPI60R099CP 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() IPI60R099CP CoolMOS TM Power Transistor Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for Server and Telecon Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=11 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0...480 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Mounting torque M3 and M3.5 screws 60 Ncm Value 31 19 93 ±30 255 -55 ... 150 1.2 11 50 ±20 V DS @ Tj,max 650 V R DS(on),max 0.099 Ω Q g,typ 60 nC Product Summary Type Package Marking IPI60R099CP PG-TO262 60R099 P PG-TO262-3-1 Rev. 2.0 page 1 2008-02-19 |
类似零件编号 - IPI60R099CP_08 |
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类似说明 - IPI60R099CP_08 |
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