2SC1213 datasheet(1/2 Pages) SECOS

部件名	2SC1213

功能描述	General Purpose Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

Elektronische Bauelemente

2SC1213, 2SC1213A

NPN

General Purpose Transistor

21-Jan-2011 Rev. D

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

E

K

F

D

B

G

H

J

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Low frequency amplifier

Complementary pair with 2SA673 and 2SA673A

CLASSIFICATION OF hFE(1)

Product-Rank

2SC1213-B

2SC1213-C

2SC1213-D

Product-Rank

2SC1213A-B

2SC1213A-C

2SC1213A-D

Range

60~120

100~200

160~320

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2SC1213

35

Collector to Base Voltage

2SC1213A

VCBO

50

V

2SC1213

35

Collector to Emitter Voltage

2SC1213A

VCEO

50

V

Emitter to Base Voltage

VEBO

4

V

Continuous Collector Current

IC

500

mA

Collector Power Dissipation

PC

400

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

2SC1213

35

-

Collector to Base Breakdown

Voltage

2SC1213A

V(BR)CBO

50

-

V

IC=10µA, IE=0

2SC1213

35

-

Collector to Emitter

Breakdown Voltage

2SC1213A

V(BR)CEO

50

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

4

-

V

IE=10µA, IC=0

Collector Cut - Off Current

ICBO

-

0.5

µ

A

VCB=20V, IE=0

hFE (1)

60

-

320

VCE=3V, IC=10mA

DC Current Gain

hFE (2)

10

-

VCE=3V, IC=500mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.6

V

IC=150mA, IB=15mA

TO-92

Millimeter

REF.

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

1

1Emitter

2

2Collector

3

3Base

2

Base

1

Emitter

Collector

3

类似零件编号 - 2SC1213

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SC1213	23Kb / 5P	Silicon NPN Epitaxial
TRANSYS Electronics Lim...	2SC1213	66Kb / 1P	Plastic-Encapsulated Transistors
Renesas Technology Corp	2SC1213	154Kb / 5P	Silicon NPN Epitaxial
Dc Components	2SC1213	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
SeCoS Halbleitertechnol...	2SC1213	77Kb / 2P	NPN Silicon General Purpose Transistor

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