2SC1906

0.05 A , 30 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

24-Feb-2011 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

E

K

F

D

B

G

H

J



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



High Transition Frequency

APPLICATIONS



VHF Amplifier



Mixer, Local Oscillator

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

30

V

Collector to Emitter Voltage

19

V

Emitter to Base Voltage

2

V

Collector Current - Continuous

50

mA

Collector Power Dissipation

300

mW

Thermal Resistance From Junction To Ambient

416

°C / W

Junction, Storage Temperature

150, -55~150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

30

-

-

V

Collector to Emitter Breakdown Voltage

19

-

-

V

Emitter to Base Breakdown Voltage

2

-

-

V

Collector Cut – Off Current

-

-

0.5

μA

Emitter Cut – Off Current

-

-

0.5

μA

DC Current Gain

40

-

-

Collector to Emitter Saturation Voltage

-

-

1

V

Transition Frequency

600

-

-

MHz

Collector Output Capacitance

-

-

2

pF



Emitter



Collector



Base

TO-92

REF.

Millimeter

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76